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Volumn , Issue , 2009, Pages 2273-2276

Carbon nanotube interconnects for low-power high-speed applications

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CARBON NANOTUBE INTERCONNECTS; CU-INTERCONNECTS; FUTURE TECHNOLOGIES; GLOBAL INTERCONNECTS; HIGH-SPEED APPLICATIONS; HIGH-SPEED INTERCONNECTS; LOCAL INTERCONNECTS; LOW POWER; MIXED BUNDLE; PERFORMANCE METRICS; POWER DISSIPATION; TECHNOLOGY NODES; TRANSMISSION LINE MODELS;

EID: 70350159339     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2009.5118252     Document Type: Conference Paper
Times cited : (11)

References (13)
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  • 4
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  • 5
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  • 6
    • 70350141491 scopus 로고    scopus 로고
    • Available
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    • (2005) Online
  • 7
    • 11744337476 scopus 로고    scopus 로고
    • Universal Density of State for Carbon Nanotubes
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  • 8
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    • Single-Walled Carbon Nanotube Electronics
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  • 9
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  • 10
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    • Modelling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects
    • H. Li et. al., "Modelling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects", in the Proceedings of Asia-Pacific Microwave Conference 2006.
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    • Li, H.1    et., al.2
  • 12
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    • Performance Projections for Ballistic Carbon Nanotube Field Effect Transistors
    • April
    • J. Guo et. al., "Performance Projections for Ballistic Carbon Nanotube Field Effect Transistors", Applied Physics Letters, Vol. 80, No. 17, April 2002.
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  • 13
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    • Characteristics of carbon nanotube field effect transistor analyzed as a ballistic nanowire field effect transistor
    • K. Natori et. al., "Characteristics of carbon nanotube field effect transistor analyzed as a ballistic nanowire field effect transistor", Journal of Applied Physics 97, 034306, 2005.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.