Ferroelectric relaxor behavior and microwave dielectric properties of Ba (Zr0.3 Ti0.7) O3 thin films grown by radio frequency magnetron sputtering

Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

  Xu, Jin ^a,c   Zhou, Dayu ^b   Menesklou, W ^a   Ivers Tiffe E ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^c Fraunhofer Center Nanoelectronic Technologies   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURIE WEISS LAW; DIELECTRIC MEASUREMENTS; FERROELECTRIC RELAXOR BEHAVIOR; FERROELECTRIC RELAXORS; FIGURE OF MERIT; FREQUENCY DEPENDENCE; FREQUENCY DISPERSION; LOW FREQUENCY; MGO SUBSTRATE; MICROWAVE DIELECTRIC PROPERTIES; MICROWAVE FREQUENCY REGION; RADIO FREQUENCY MAGNETRON SPUTTERING; RELATIVE PERMITTIVITY; TEMPERATURE DEPENDENCE; TIO; TRANSITION TEMPERATURE; TUNABILITIES; TUNABLE DEVICE; VOGEL-FULCHER RELATIONS;

BARIUM; FERROELECTRICITY; MAGNETRONS; MICROWAVES; RADIO; RADIO WAVES; THIN FILMS; ZIRCONIUM;

PERMITTIVITY;

EID: 70350095594     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3238318     Document Type: Article

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