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Volumn 95, Issue 15, 2009, Pages

Temperature-dependent Hall and photoluminescence evidence for conduction-band edge shift induced by alloying ZnO with magnesium

(8) Pan, X H a,b Guo, W a Ye, Z Z b Liu, B c Che, Y c Tian, W d Schlom, D G d Pan, X Q a

a UNIVERSITY OF MICHIGAN (United States)

b ZHEJIANG UNIVERSITY (China)

c IMRA AMERICA INC (United States)

d Cornell University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND EDGE; DONOR STATE; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; ZNO;

ACTIVATION ENERGY; ALLOYING; CARRIER CONCENTRATION; EPITAXIAL FILMS; EPITAXIAL LAYERS; MAGNESIUM; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350044694 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236771 Document Type: Article

Times cited : (11)

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