Enhanced ferroelectric properties of Fe-doped BaTiO3 thin film deposited on LaNiO3/Si substrate by sol-gel technique

Materials Letters

Volumn 63, Issue 30, 2009, Pages 2622-2624

  Liu, Zhipeng ^a   Deng, Hongmei ^b   Yang, Pingxiong ^a   Chu, Junhao ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b Shanghai University   (China)

Author keywords

BaTiO3; Ferroelectricity; Sol gel; Thin film

Indexed keywords

BATIO3; DIELECTRIC CONSTANTS; FE-DOPED BATIO; FERROELECTRIC PROPERTY; LOSS TANGENT; REMNANT POLARIZATIONS; ROOM TEMPERATURE; SI SUBSTRATES; SOL-GEL TECHNIQUE;

DOPING (ADDITIVES); FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; GELATION; GELS; SOL-GEL PROCESS; SOL-GELS; SOLS; SUBSTRATES; THIN FILM DEVICES; VAPOR DEPOSITION;

BARIUM COMPOUNDS;

EID: 70350012272     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.09.028     Document Type: Article

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