The influence of annealing temperatures on the properties of Bi2VO5.5/LaNiO3/Si thin films

Materials Letters

Volumn 63, Issue 17, 2009, Pages 1535-1537

  Guo, Ming ^a   Deng, Hongmei ^b   Yang, Pingxiong ^a   Chu, Junhao ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b Shanghai University   (China)

Author keywords

BVO; Chemical solution deposition; Ferroelectric; Thin films

Indexed keywords

ANNEALING TEMPERATURES; BVO; CHEMICAL SOLUTION DEPOSITION; COERCIVE FIELDS; ELECTRICAL PROPERTIES; FERROELECTRIC; REMNANT POLARIZATIONS; SI (100) SUBSTRATES;

ANNEALING; CERAMIC CAPACITORS; CHEMICALS; ELECTRIC PROPERTIES; FERROELECTRIC THIN FILMS; FERROELECTRICITY; SEMICONDUCTING SILICON COMPOUNDS;

FERROELECTRIC FILMS;

EID: 67349272053     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.04.004     Document Type: Article

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