No trace of divacancies at room temperature in germanium

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 336-339

  Kolkovsky, Vl ^a   Christian Petersen, M ^a   Nylandsted Larsen, A ^a   Mesli, A ^b  

^a AARHUS UNIVERSITY   (Denmark)

^b UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

Divacancy; Ge; Irradiation induced defects

Indexed keywords

ANNEALING PROPERTIES; BAND GAPS; DENSITY FUNCTION CALCULATIONS; DIVACANCIES; DIVACANCY; GE; HIGH RESOLUTION; IRRADIATION-INDUCED DEFECTS; LAPLACE DEEP LEVEL TRANSIENT SPECTROSCOPIES; MESA-DIODES; OPTICAL STUDY; ROOM TEMPERATURE;

DEEP LEVEL TRANSIENT SPECTROSCOPY; IRRADIATION; PROBABILITY DENSITY FUNCTION;

GERMANIUM;

EID: 70349763153     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.07.006     Document Type: Article

References (20)

1. see e.g. Claeys C, Peaker A, Svensson B, Vanhellemont J. editors. Proceedings of symposium T, EMRS Spring Meeting 2006: Germanium-based Semiconductors from Materials to Devices ed. Elsevier, 2006.
2. Emtsev V. Point defects in germanium: reliable and questionable data in radiation experiments. Mat Sci Sem Proc 9 (2006) 580
3. Kolkovsky Vl., Petersen M.C., and Nylandsted Larsen A. Alpha-particle irradiation-induced defects in n-type germanium. Appl Phys Lett 90 (2007) 112110
4. Markevich P., Peaker A.R., Litvinov V.V., Emtsev V.V., and Murin L.I. Electronic properties of antimony-vacancy complex in Ge crystals. J Appl Phys 95 (2004) 4078
5. Fage-Pedersen J., Nylandsted Larsen A., and Mesli A. Irradiation-induced defects in Ge studied by transient spectroscopies. Phys Rev B 62 (2000) 10116
6. Poulin F., and Bourgoin J.C. Threshold energy for atomic displacement in electron irradiated germanium. Rev. Phys. Appl, 15 (1980) 15-19
7. Mooney P.M., Poulin F., and Bourgoin J.C. Annealing of electron-induced defects in n-type germanium. Phys Rev B 28 (1983) 3372
8. Stein H.J. Divacancy-like absorption in ion-bombarded Ge. Radiation Damage and Defects in Semiconductors (1973), London Institute of Physics, London
9. Janke C., Jones R., Oberg S., and Briddon P.R. Supercell and cluster density functional calculations of the thermal stability of the divacancy in germanium. Phys Rev B 75 (2007) 195208
10. Coutinho J., Torres V.J.B., Jones R., Carvalho A., Oberg S., and Briddon P.R. Calculation of deep carrier traps in a divacancy in germanium crystals. Appl Phys Lett 88 (2006) 091919
11. Haesslein H., Sielemann R., and Zistl C. Vacancy and self-interstitials in germanium observed by perturbed angular correlation spectroscopy. Phys Rev Lett 80 (1998) 2626
12. Coutinho J., Jones R., Torres V.J.B., Barroso M., Oberg S., and Briddon P.R. Electronic structure and Jahn-Teller instabilities in a single vacancy in Ge. J Phys: Condens Matter 17 (2005) L521-L527
13. Ziegler JF. The stopping and Range of Ions in Solids-SRIM 2003. 〈http://www.SRIM.com〉.
14. Lindberg C.E., Lundsgaard Hansen J., Bomholt P., Mesli A., Bonde Nielsen K., and Nylandsted Larsen A. The antimony-vacancy defect in p-type germanium. Appl Phys Lett 87 (2005) 172103
15. Petersen M.C., Lindberg C.E., Bonde Nielsen K., Mesli A., and Nydsted Larsen A. DLTS studies o firradiation-induced defects in p-type germanium. Mat Sci Sem Proc 9 (2006) 597
16. Mesli A, Bonde Nielsen K, Dobaczewski L, Kolkovsky Vl, Petersen MC, Nylandsted Larsen A. Low-temperature irradiation-induced defects in germanium: in-situ analysis. submitted to Phys Rev B.
17. Watkins G.D. Radiation damage in semiconductors (1964), Dunod, Paris p. 97
18. Kolkovsky Vl, Petersen MC, Mesli A, Nylandsted Larsen A. The gallium interstitial in irradiated germanium. unpublished.
19. Whan R.E. Investigations of oxygen-defect interactions between 25 and 700 K in irradiated germanium. Phys Rev A690 (1965) 140
20. Carvalho A., Jones R., Janke C., Goss J.P., Briddon P.R., Coutinho J., et al. Density functional study of low temperature radiation damage in Ge. Phys Rev Lett 99 (2007) 175502