DLTS studies of irradiation-induced defects in p-type germanium

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 597-599

  Christian Petersen, M ^a   Lindberg, C E ^a   Nielsen, K Bonde ^a   Mesli, A ^b   Nylandsted Larsen, A ^a  

^a AARHUS UNIVERSITY   (Denmark)

^b UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

Defects; DLTS (irradiation); Germanium

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; IRRADIATION;

DIVACANCY; IRRADIATION-INDUCED DEFECTS;

GERMANIUM;

EID: 33845202900     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.050     Document Type: Article

References (6)

1. In: Hull R., and Bean J.C. (Eds). Germanium silicon: physics and materials vol. 56 (1999), Academic Press, San Diego
2. Fage-Pedersen J., Nylandsted Larsen A., and Mesli A. Phys Rev B 62 10 (2000) 116
3. Markevich V.P., Hawkins I.D., Peaker A.R., Litvinov V.V., Murin L.I., Dobaczewski L., et al. Appl Phys Lett 81 (2002) 1821
4. Markevich V.P., Peaker A.R., Litvinov V.V., Emtsev V.V., and Murin L.I. J App Phys 95 (2004) 4078
5. Markevich V.P., Hawkins I.D., Peaker A.R., Emtsev K.V., Emtsev V.V., Litvinov V.V., et al. Phys Rev B 70 (2004) 235213
6. Lindberg C.E., Lundsgaard Hansen J., Bomholt P., Mesli A., Bonde Nielsen K., and Nylandsted Larsen A. Appl Phys Lett 87 (2005) 172103