Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages 2301-2308

  Vos, Ingrid ^a   Hellin, David ^b   Vereecke, Guy ^a   Pavel, Elizabeth ^c   Boullart, Werner ^a   Vertommen, Johan ^b  

^a IMEC   (Belgium)

^b LAM RESEARCH CORPORATION   (Belgium)

^c LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT ENVIRONMENT; AMMONIA HYDROXIDE; CLEAN PROCESS; DELAY EFFECTS; DELAY TIME; DETRIMENTAL EFFECTS; DILUTED HYDROFLUORIC ACIDS; DRY ETCH PROCESS; ELECTRICAL DEGRADATION; ELECTRICAL PERFORMANCE; EXPOSURE TIME; FRONT-END-OF-LINE APPLICATIONS; HARDMASKS; HIGH YIELD; INTERFACIAL LAYER; NETWORK STRUCTURES; NICKEL SILICIDE; OXIDE LAYER; POLY-SI; POLY-SI GATES; POST-ETCH RESIDUES; RESIDUE REMOVAL; SHALLOW TRENCH ISOLATION; SILICIC ACIDS; SUBSTRATE LOSS; THERMODESORPTION; TIME-SCALES; WET CLEANING;

CONTACT RESISTANCE; DISSOLUTION; HYDROFLUORIC ACID; HYDROGEN; HYDROGEN PEROXIDE; MASS SPECTROMETRY; METALLIC COMPOUNDS; POLYSILICON; SEMICONDUCTING SILICON; SILICIDES; SILICON WAFERS; SPEECH ANALYSIS; TEMPERATURE PROGRAMMED DESORPTION; THERMAL DESORPTION; WATER VAPOR;

CHEMICAL CLEANING;

EID: 70349690436     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3225596     Document Type: Article

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