Bias voltage induced n - To p -type transition in epitaxial bilayer graphene on SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 8, 2009, Pages

  Guo, Yufeng ^a,b   Guo, Wanlin ^a,b   Chen, Changfeng ^a  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^b UNIVERSITY OF NEVADA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70349459285     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.085424     Document Type: Article

References (23)

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