Decay mechanisms of excited electrons in quantum-well states of ultrathin Pb islands grown on Si(111): Scanning tunneling spectroscopy and theory

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 8, 2009, Pages

  Hong, I Po ^a   Brun, Christophe ^a   Patthey, François ^a   Sklyadneva, I Yu ^b,c   Zubizarreta, X ^b,d   Heid, R ^e   Silkin, V M ^b,d   Echenique, P M ^b,d   Bohnen, K P ^e   Chulkov, E V ^b,d   Schneider, Wolf Dieter ^a  

^a EPFL   (Switzerland)

^b DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

^c INSTITUTE OF STRENGTH PHYSICS AND MATERIALS SCIENCE   (Russian Federation)

^d CENTRO MIXTO CSIC UPV EHU   (Spain)

^e KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70349438753     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.081409     Document Type: Article

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