InGaAs-capped InAs-GaAs quantum-dot infrared photodetectors operating in the long-wavelength infrared range

IEEE Photonics Technology Letters

Volumn 21, Issue 18, 2009, Pages 1332-1334

  Lin, Wei Hsun ^a   Tseng, Chi Che ^a   Chao, Kuang Ping ^a   Mai, Shu Cheng ^a   Lin, Shih Yen ^b,c,d   Wu, Meng Chyi ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

Quantum dot infrared photodetectors (QDIPs)

Indexed keywords

ASYMMETRIC BANDS; CAPPING LAYER; GAAS; INAS; LONG-WAVELENGTH INFRARED; LONG-WAVELENGTH INFRARED RANGES; NEGATIVE BIAS; QUANTUM DOTS; QUANTUM-DOT INFRARED PHOTODETECTORS; QUANTUM-DOT INFRARED PHOTODETECTORS (QDIPS); SIMPLE STRUCTURES; VOLTAGE POLARITY;

GALLIUM ALLOYS; INDIUM ARSENIDE; INFRARED DETECTORS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349436087     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2026630     Document Type: Article

References (11)

1. 0.7As blocking layer," Appl. Phys. Lett., vol. 78, pp. 2784-2786, Apr. 2001.
2. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, S. Gunapala, S. Bandara, S. B. Rafol, and S. W. Kennerly, "High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity," IEEE Photon. Technol. Lett., vol. 16, no. 5, pp. 1361-1363, May 2004.
3. S. F. Tang, S. Y. Lin, and S. C. Lee, "Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector," Appl. Phys. Lett., vol. 78, pp. 2428-2430, Apr. 2001.
4. S. T. Chou, M. C. Wu, S. Y. Lin, and J. Y. Chi, "The influence of doping density on the normal incident absorption of quantum-dot infrared photodetectors," Appl. Phys. Lett., vol. 88, pp. 173511-173513, Apr. 2006.
5. S. F. Tang, C. D. Chiang, P. K. Weng, Y. T. Gau, J. J. Ruo, S. T. Yang, C. C. Shih, S. Y. Lin, and S. C. Lee, "High-temperature operation normal incident 256 × 256 InAs/GaAs quantum dot infrared photodetector focal plane array," IEEE Photon. Technol. Lett., vol. 18, no. 8, pp. 986-988, Apr. 15, 2006.
6. S. D. Gunapala, S. V. Bandara, C. J. Hill, D. Z. Ting, J. K. Liu, S. B. Rafol, E. R. Blazejewski, J. M. Mumolo, S. A. Keo, S. Krishna, Y. C. Chang, and C. A. Shott, "Long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) focal plane array," Proc. SPIE, vol. 6206, p. 62060J, 2006.
7. S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, "Demonstration of a 320 × 256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors," Appl. Phys. Lett., vol. 86, pp. 193501-1-193501-3, May 2005.
8. G. Ariyawansa, A. G. Unil Perera, G. S. Raghavan, G. Von Winckel, A. Stintz, and S. Krishna, "Effect of well width on three-color quantum dots-in-a-well infrared detectors," IEEE Photon. Technol. Lett., vol. 17, no. 5, pp. 1064-1066, May 2005.
9. L. Höglund, P. O. Holtz, H. Pettersson, C. Asplund, Q. Wang, H. Malm, S. Almqvist, E. Petrini, and J. Y. Andersson, "Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors," Appl. Phys. Lett., vol. 93, pp. 203512-1-203512-3, Nov. 2008.
10. 0.85As quantum dots-in-a-well detector operating in the long-wave infrared atmospheric window (8-12 μm)," J. Appl. Phys., vol. 96, pp. 1036-1039, Jul. 2004.
11. Y. J. Mii, P. G. Karunasiri, K. L.Wang, M. Chen, and P. F. Yuh, "Large stark shifts of the local to global state intersubband transitions in step quantum wells," Appl. Phys. Lett., vol. 56, pp. 1986-1988, May 1990.