Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 5, 2009, Pages 1109-1111

  Masaki, Shingo ^a   Nakanishi, Hisayuki ^a   Sugiyama, Mutsumi ^a   Chichibu, Shigefusa F ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CDS; CU(IN , GA)SE; DIFFRACTION PEAKS; FILM SURFACES; GA-DOPED ZNO; OPTICAL TRANSMITTANCE; ORIENTED GROWTH; PLASMA SPUTTERING; TRANSPARENT CONDUCTING FILMS; WAVELENGTH RANGES; ZNO;

CADMIUM COMPOUNDS; CONDUCTIVE FILMS; GALLIUM; HELICONS; OXIDE FILMS; PHOTOVOLTAIC CELLS; PLASMAS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

FILM PREPARATION;

EID: 70349428789     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881168     Document Type: Conference Paper

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