Growth of CuInS2 and CuIn5S8 on Si(001) by the multisource evaporation method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5485-5489

  Kobayashi, Satoshi ^a   Tsuboi, Nozomu ^a   Sega, Toshiyuki ^a   Oishi, Koichiro ^b   Kaneko, Futao ^a  

^a NIIGATA UNIVERSITY   (Japan)

^b NAGAOKA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Cu Au structure; CuIn5S8; CuInS2; Reflection high energy electron diffraction; Semiconducting ternary compounds; Vapor phase epitaxy; X ray diffraction

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; EVAPORATION; MIXTURES; PROBES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTOR MATERIALS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CHALCOPYRITE; CPPER INDIUM SULFIDE; ELECTRON PROBE X RAY MICRO ANALYSIS; MULTISOURCE EVAPORATION METHOD; SEMICONDUCTING TERNARY COMPOUNDS; SPHALERITE STRUCTURE;

COPPER ALLOYS;

EID: 0344063449     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5485     Document Type: Article

References (23)

1. J. J. M. Binsma, L. J. Giling and J. Bloem: J. Cryst. Growth 50 (1980) 429.
2. J. Klaer, J. Bruns, R. Henninger, K. Siemer, R. Klenk, K. Ellmer and D. Braunig: Semicond. Sci. Technol. 13 (1998) 1456.
3. Th. Hahn, H. Metzner, B. Plikat and M. Seibt: Appl. Phys. Lett. 72 (1998) 2733.
4. D. S. Su and S.-H. Wei: Appl. Phys. Lett. 74 (1999) 2483.
5. H. Metzner, Th. Hahn, J. H. Bremer, M. Seibt, B. Plikat, I. Dirnstorfer and B. K. Meyer: Thin Solid Films 361-362 (2000) 504.
6. T. Hahn, H. Metzner, B. Plikat and M. Seibt: Thin Solid Films 387 (2001) 83.
7. Y. Yamamoto, T. Yamaguchi, T. Tanaka, N. Tanahashi and A. Yoshida: Sol. Energy Mater. Sol. Cells 49 (1997) 399.
8. G. Hodes, T. Engelhard, J. A. Turner and D. Cahen: Sol. Energy Mater. 12 (1985) 211.
9. D. Schmid, M. Ruckh, F. Grunwald and H. W. Schock: J. Appl. Phys. 73 (1993) 2902.
10. R. Scheer and H. J. Lewerenz: J. Vac. Sci. Technol. A 12 (1994) 51.
11. R. Scheer and H. J. Lewerenz: J. Vac. Sci. Technol. A 13 (1995) 1924.
12. R. Scheer, K. Diesner and H. J. Lewerenz: Thin Solid Films 268 (1995) 130.
13. E. I. Rogacheva: Cryst. Res. Technol. 31 (1996) 1.
14. K. Oishi, S. Kobayashi and F. Kaneko: J. Cryst. Growth 153 (1995) 158.
15. K. Oishi, S. Kobayashi, S. Ohta, N. Tsuboi and F. Kaneko: J. Cryst. Growth 177 (1997) 88.
16. M. Kurasawa, S. Kobayashi, F. Kaneko, K. Oishi and S. Ohta: J. Cryst. Growth 167 (1996) 151.
17. N. Tsuboi, M. Kurasawa, S. Kobayashi, K. Oishi and F. Kaneko: Proc. 12th Int. Conf. Ternary and Multinary Compounds, Hsinchu, 2000
18. N. Tsuboi, M. Kurasawa, S. Kobayashi, K. Oishi and F. Kaneko: Jpn. J. Appl. Phys. 39 (2000) Suppl. 39-1, p. 216.
19. PDF 72-0956.
20. T. Hanada, A. Yamana, Y. Nakamura, O. Nittono and T. Wada: Jpn. J. Appl. Phys. 36 (1997) L1494.
21. T. Ohachi and B. R. Pamplin: J. Cryst. Growth 42 (1977) 598.
22. T. Yukawa, K. Kuwabara and K. Koumoto: Thin Solid Films 286 (1996) 151.
23. PDF 49-1382 and 49-1383.