Growth of CuInS2 epitaxial films on Si(001) by multisource evaporation method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 2, 2005, Pages 999-1003

  Kobayashi, Satoshi ^a   Kozakai, Hirohumi ^a   Vequizo, Reynaldo Magdadaro ^a   Tsuboi, Nozomu ^a   Oishi, Koichiro ^b   Kaneko, Futao ^a  

^a NIIGATA UNIVERSITY   (Japan)

^b NAGAOKA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Chalcopyrite structure; Cu Au structure; CuInS2; Photoluminescence; Reflection high energy electron diffraction; Ternary compound; Thin films; Vapor phase epitaxy; X ray diffraction

Indexed keywords

EVAPORATION; EXCITONS; PHONONS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; TERNARY SYSTEMS; THIN FILMS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

CHALCOPYRITE STRUCTURE; CU-AU STRUCTURE; CUINS2; TERNARY COMPOUNDS;

COPPER COMPOUNDS;

EID: 17444380853     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.999     Document Type: Article

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