Transport mechanism in the quantum well embedded with quantum dots

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 4, 2009, Pages 813-816

  Kannan, E S ^a   Kim, Gil Ho ^a   Farrer, I ^b   Ritchie, D A ^b  

^a Sungkyunkwan University   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CROSSING POINT; DEFECT LEVELS; DOUBLE-QUANTUM WELL SYSTEMS; EDGE STATE; ELECTRON TRANSPORT; FILLING FACTOR; GATE BIAS; HALL RESISTANCE; HYSTERESIS EFFECT; INAS QUANTUM DOTS; LOW CARRIER DENSITY; MAGNETIC FIELD INDUCED TRANSITIONS; MAGNETORESISTANCE MEASUREMENTS; QUANTUM DOT; QUANTUM HALL LIQUIDS; QUANTUM WELL; SINGLE QUANTUM WELL; SUBSTANTIAL REDUCTION; TRANSPORT MECHANISM;

CARRIER CONCENTRATION; CHARGE TRAPPING; ELECTRIC RESISTANCE; ELECTRONS; INDIUM ARSENIDE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 70349421307     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200880573     Document Type: Conference Paper

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