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Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 11, 2009, Pages 1078-1082

Optical and structural characteristics of Sb-doped SnO 2 thin films grown on Si (111) substrates by Sol-Gel technique

(3) Deng, Hongmei a,b Kong, Jing a,b Yang, Pingxiong a,b

a Shanghai University (China)

b EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

EXTINCTION COEFFICIENTS; INCIDENT PHOTON ENERGY; INTEGRATED OPTICAL DEVICES; POLYCRYSTALLINE; RUTILE PHASE; SB-DOPED SNO; SI(111) SUBSTRATE; SOL-GEL TECHNIQUE; SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS; STRUCTURAL CHARACTERISTICS;

GELATION; GELS; LIGHT MEASUREMENT; LIGHT REFRACTION; OPTICAL CONSTANTS; OPTICAL INSTRUMENTS; OXIDE MINERALS; PHOTONS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; SPECTROSCOPIC ELLIPSOMETRY; TIN; TITANIUM OXIDES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70349420044 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-008-9829-4 Document Type: Article

Times cited : (15)

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