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Volumn , Issue , 2009, Pages
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A 1.6V 3.3Gb/s GDDR3 DRAM with dual-mode phase and delay-locked loop using power-noise management with unregulated in 54nm CMOS
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 70349289823
PISSN: 01936530
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISSCC.2009.4977347 Document Type: Conference Paper |
Times cited : (4)
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References (6)
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