Modeling and design of RF amplifiers for envelope tracking WCDMA base-station applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 9, 2009, Pages 2148-2159

  Jeong, Jinseong ^a   Kimball, Donald F ^b   Kwak, Myoungbo ^a   Hsia, Chin ^a   Draxler, Paul ^a,c   Asbeck, Peter M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c QUALCOMM INC   (United States)

Author keywords

Design optimization; Envelope tracking (ET); GaAs high voltage heterojunction bipolar transistor (HVHBT); GaN heterostructure field effect transistor (HFET); Modeling; Quasi static; RF power amplifier (PA); Si LDMOS

Indexed keywords

DESIGN OPTIMIZATION; ENVELOPE TRACKING (ET); GAAS HIGH-VOLTAGE HETEROJUNCTION BIPOLAR TRANSISTOR (HVHBT); GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); MODELING; QUASI-STATIC; RF POWER AMPLIFIER (PA); SI LDMOS;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; BROADBAND AMPLIFIERS; DESIGN; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOS DEVICES; OPTIMIZATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SILICON; WIRELESS TELECOMMUNICATION SYSTEMS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 70349275185     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2027075     Document Type: Article

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