Synthesis of Si-C nanostructures by laser ablation of silicon target in n-heptane vapor

Materials Letters

Volumn 63, Issue 28, 2009, Pages 2492-2494

  Lv, Kui Ming ^a   Yang, Jing ^a   Niu, Kai Yang ^a   Wang, Hong Li ^a   Sun, Jing ^a   Du, Xi Wen ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Laser processing; Microstructure; Nanomaterials; SiC

Indexed keywords

CONTROLLABLE SYNTHESIS; FORMATION MECHANISM; LASER ABLATION SYSTEMS; LASER FREQUENCY; LASER PROCESSING; MATERIAL SYSTEMS; N-HEPTANES; NANOMATERIALS; REAL-TIME OBSERVATION; SIC; SILICON TARGETS; SOLID SILICON; STARTING MATERIALS; ULTRAFINE; VAPOR PHASE REACTIONS;

GRAPHITE; HEPTANE; LASER ABLATION; LASER APPLICATIONS; LASERS; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PULSED LASER DEPOSITION; SILICON; SILICON CARBIDE; SYNTHESIS (CHEMICAL); TARGETS; VAPORS;

NANOCRYSTALS;

EID: 70349251121     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.08.049     Document Type: Article

References (18)

1. Weitzel C.E., Palmour J.W., Carter C.H., Moore J.K., Nordquist K.J., Allen S., et al. IEEE Trans Electron Devices 43 (1996) 1732-1741
2. Wong E.W., Sheehan P.E., and Lieber C.M. Science 277 (1997) 1971-1975
3. Ho G.W., Wong A.S., Kang D.J., and Welland M.E. Nanotechnology 15 (2004) 996-999
4. Yang W., Araki H., Tang C.C., Thaveethavorn S., Kohyama A., Suzuki H., et al. Adv Mater 17 (2005) 1519-1523
5. Fan J.Y., Li H.X., Jiang J., So L.Y., Lam Y.W., and Chu P.K. Small 4 (2008) 1058-1062
6. Botsoa J., Lysenko V., Geloen A., Marty O., Bluet J.M., and Guillot G. Appl Phys Lett 92 173902 (2008) 1-3
7. Myong S.Y., Kim S.S., and Lim K.S. Appl Phys Lett 84 (2004) 5416-5418
8. Mpourmpakis G., Froudakis G.E., Lithoxoos G.P., and Samios J. Nano Lett 6 (2006) 1581-1583
9. Pol V.G., Pol S.V., Gedanken A., Lim S.H., Zhong Z., and Lin J. J Phys Chem B 110 (2006) 11237-11240
10. Akiyama M., Hanada M., Takao H., Sawada K., and Ishida M. Jpn J Appl Phys 41 (2002) 2552-2555
11. Kim H.Y., Bae S.Y., Kim N.S., and Park J. Chem Commun (2003) 2634-2635
12. Rossi A.M., Murphy T.E., and Reipa V. Appl Phys Lett 92 253112 (2008) 1-3
13. Pei L.Z., Tang Y.H., Chen Y.W., Guo C., Yuan X.X., and Zhang Y. J Appl Phys 99 114306 (2006) 1-6
14. Cui L., Li J.J., Sun J., and Du X.W. Semicond Sci Technol 23 035015 (2008) 1-4
15. Kassiba A., Janusik M.M., and Boucle J. Phys Rev B 66 155317 (2002) 1-7
16. Du X.W., Qin W.J., Lu Y.W., Han X., Fu Y.S., and Hu S.L. J Appl Phys 102 013518 (2007) 1-4
17. Ishiguro T., Shoji T., and Inada H. Appl Phys A 69 (1999) S149-S152
18. Larciprete R., Lizzit S., Cepek C., Botti S., and Goldoni A. Surf Sci 532-535 (2003) 886-891