Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors

Journal of Semiconductors

Volumn 30, Issue 8, 2009, Pages

  Fu, Xiaojun ^a   Zhang, Haiying ^a   Guo, Changxin ^b   Xu, Jingbo ^a   Li, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Back gate; Field effect transistor; Suspended; Ultraviolet radiation; ZnO nanowire

Indexed keywords

BACK-GATE; DEVICE APPLICATION; DRAIN-INDUCED BARRIER LOWERING; EXCELLENT PERFORMANCE; HYDROTHERMAL METHODS; INTRINSIC PROPERTY; ON/OFF RATIO; PEAK TRANSCONDUCTANCE; PUNCH-THROUGH; SOURCE-DRAIN CURRENT; ZNO; ZNO NANOWIRES; ZNO NWS;

DRAIN CURRENT; ELECTRON MOBILITY; FABRICATION; MESFET DEVICES; NANOWIRES; SOLAR RADIATION; ULTRAVIOLET RADIATION; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 70349178263     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/8/084002     Document Type: Article

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