Mechanisms of band-edge emission in Mg-doped p-type GaN

Applied Physics Letters

Volumn , Issue , 1995, Pages 1883-

  Smith, M ^a   Chen, G D ^a,d   Lin, J Y ^a   Jiang, H X ^a   Salvador, A ^b   Sverdlov, B N ^b   Botchkarev, A ^b   Morkoc, H ^b   Goldenberg, B ^c  

^a KANSAS STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c HONEYWELL TECHNOLOGY CENTER   (United States)

^d XI'AN JIAOTONG UNIVERSITY   (China)

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EID: 36448999157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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