Processing and properties of Yb-doped BiFeO3 ceramics

Applied Physics Letters

Volumn 91, Issue 8, 2007, Pages

  Yan, Z ^c   Wang, K F ^c   Qu, J F ^c   Wang, Y ^a   Song, Z T ^b   Feng, S L ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; LIQUID PHASE SINTERING; POLARIZATION; REMANENCE; SEMICONDUCTING BISMUTH COMPOUNDS; X RAY DIFFRACTION; YTTERBIUM;

LATTICE DISTORTION; REMNANT POLARIZATION;

CERAMIC MATRIX COMPOSITES;

EID: 34548214304     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2775034     Document Type: Article

References (27)

1. S. V. Kizelev, R. P. Ozerov, and G. S. Zhdanov, Sov. Phys. Dokl. 145, 1255 (1962).
2. M. Fiebig, J. Phys. D 38, R123 (2005).
3. S. W. Cheong and M. Mostovoy, Nat. Mater. 6, 13 (2007).
4. W. Eerestein, N. D. Mathur, and J. F. Scott, Nature (London) 442, 759 (2006).
5. Ferroelectrics and Related Substances, edited by, H. Landolt, Landolt-Börnstein, New Series, Group III Vol. 16, pt. (Springer, Berlin, 1980), p. 377.
6. J. R. Cheng, N. Li, and L. E. Cross, J. Appl. Phys. 94, 5153 (2003).
7. J. Wang, H. B. Neaton, H. Zeng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuting, and R. Ramesh, Science 299, 1719 (2003).
8. K. Y. Yun, M. Noda, and M. Okuyama, Appl. Phys. Lett. 83, 3981 (2003).
9. Y. Wang, Q. H. Jiang, H. C. He, and C. W. Nan, Appl. Phys. Lett. 88, 142503 (2006).
10. Y. H. Lee, J. M. Wu, Y. L. Chueh, and L. J. Chou, Appl. Phys. Lett. 87, 172901 (2005).
11. J. B. Neaton, C. Ederer, U. V. Waghmare, N. A. Spaldin, and K. M. Rabe, Phys. Rev. B 71, 014113 (2005).
12. Y. P. Wang, L. Zhou, M. F. Zhang, X. Y. Chen, J. M. Liu, and Z. G. Liu, Appl. Phys. Lett. 84, 1731 (2004).
13. S. T. Zhang, M. H. Lu, D. Wu, Y. F. Chen, and N. B. Ming, Appl. Phys. Lett. 87, 262907 (2005).
14. R. N. P. Choudhary, K. Perez, P. Bhattacharya, and R. S. Katiyar, Appl. Phys. Lett. 86, 131 (2006).
15. X. D. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86, 062903 (2005).
16. M. Kumar and K. L. Yadav, J. Appl. Phys. 100, 074111 (2006).
17. S. K. Singh, H. Ishiwara, and K. Maruyama, Appl. Phys. Lett. 88, 262908 (2006).
18. J. K. Kim, S. S. Kim, W. J. Kim, A. S. Bhalla, and R. Guo, Appl. Phys. Lett. 88, 132901 (2006).
19. G. L. Yuan and S. W. Or, Appl. Phys. Lett. 88, 062905 (2006).
20. H. Uchida, R. Ueno, H. Funakubo, and S. Koda, J. Appl. Phys. 100, 014106 (2006).
21. C. Ederer and N. A. Spaldin, Phys. Rev. B 71, 060401 (2005).
22. D. Lee, M. G. Kim, S. Ryu, H. M. Jang, and S. G. Lee, Appl. Phys. Lett. 86, 222903 (2005).
23. G. W. Pabst, L. W. Martin, Y. H. Chu, and R. Ramesh, Appl. Phys. Lett. 90, 072902 (2007).
24. P. Zubko, D. J. Jung, and J. F. Scott, J. Appl. Phys. 100, 114113 (2006).
25. B. Nagaraj, S. Aggarwal, T. K. Song, T. Sawhney, and R. Ramesh, Phys. Rev. B 59, 16022 (1999).
26. C. Kumar, R. Pascual, and M. Sayer, J. Appl. Phys. 71, 865 (1992).
27. S. T. Zhang, Y. Zhang, M. H. Lu, C. L. Du, Y. F. Chen, Z. G. Liu, Y. Y. Zhu, and N. B. Ming, Appl. Phys. Lett. 88, 162901 (2006).