High frequency characterisation of single inas nanowire field-effect transistors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Blekker, K ^a   Do, Q T ^a   Matiss, A ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

High frequency characterisation; InAs nanowire field effect transistor; Magnesium Oxide gate dielectric

Indexed keywords

CARRIER SUBSTRATE; CHARACTERISATION; DE-EMBEDDING; FIELD-EFFECT; GATE SOURCE CAPACITANCE; HIGH FREQUENCY; HIGH FREQUENCY CHARACTERISATION; INAS; INAS NANOWIRE FIELD-EFFECT TRANSISTOR; INAS NANOWIRE FIELD-EFFECT TRANSISTORS; LOW FREQUENCY; MAGNESIUM OXIDE GATE DIELECTRIC; MAGNESIUM OXIDES; MAXIMUM OSCILLATION FREQUENCY; MAXIMUM STABLE GAIN; NANOWIRE FET; ON-WAFER; SMALL SIGNAL; ULTRA-SMALL;

COPLANAR WAVEGUIDES; ELECTRIC WIRE; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM ARSENIDE; INDIUM PHOSPHIDE; MAGNESIUM; NANOWIRES; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM; SILICON NITRIDE;

FIELD EFFECT TRANSISTORS;

EID: 70149114001     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4703003     Document Type: Conference Paper

References (5)

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2. Q.-T. Do, K. Blekker, I. Regolin, W. Prost, and F.-J. Tegude, "High transconductance MISFET with a single InAs nanowire channel", IEEE Electron Device Letters, vol.28, no.8, pp. 682-684, August 2007
3. H. Cho, K. P. Lee, B. P. Gila, C. R. Abernathy, S. J. Pearton, F. Ren, " Temperature dependence of MgO/GaN MOSFET performance", Solid- State Electronics , vol. 47, no. 9, pp. 1601-1604, 2003.
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5. Q. T. Do, K. Blekker, I. Regolin, E. Schuster, R. Peters, W. Prost, and F.-J. Tegude, "Magnesium oxide (MgO) as gate dielectric for n-doped single InAs nanowire field-effect transistor", 7th Topical Workshop on Heterostructure Microelectronics, Japan, August 2007