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Volumn , Issue , 2004, Pages 284-287
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High performance millimeter wave 0.1 μm InP HEMT MMIC LNAs fabricated on 100 mm wafers
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITOR DESIGN;
LOW NOISE AMPLIFIERS (LNA);
METAMORPHIC BUFFER GROWTH;
STANDARD DEVIATIONS;
CAPACITORS;
CARRIER CONCENTRATION;
ELECTRIC CONDUCTIVITY;
HIGH ELECTRON MOBILITY TRANSISTORS;
MILLIMETER WAVE DEVICES;
MOLECULAR BEAM EPITAXY;
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;
MORPHOLOGY;
SEMICONDUCTOR DOPING;
THROUGHPUT;
VACUUM;
POWER AMPLIFIERS;
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EID: 10444240737
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (4)
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