Optimal deposition conditions of TiN barrier layers for the growth of vertically aligned carbon nanotubes onto metallic substrates

Journal of Physics D: Applied Physics

Volumn 42, Issue 10, 2009, Pages

  Garcia Cespedes J ^a   Alvarez Garcia J ^b   Zhang, X ^c   Hampshire, J ^c   Bertran, E ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b SA   (Spain)

^c TEER COATINGS LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; BARRIER MATERIAL; CATALYST LAYERS; CATALYST MATERIAL; CATALYST PRECURSORS; CHEMICAL DEPOSITION; CNT FILMS; COPPER SUBSTRATES; DEPOSITION CONDITIONS; DEPOSITION PARAMETERS; DIFFUSION BARRIER LAYERS; DIFFUSION PROPERTIES; DIFFUSIVITIES; ELECTRICAL CONTACTS; HIGH ELECTRICAL CONDUCTIVITY; HIGH GROWTH TEMPERATURES; HIGH POWER APPLICATIONS; HIGH POWER SWITCH; IN-DIFFUSION; LOW RESISTANCE; LOW-RESISTANCE CONTACTS; METALLIC PRECURSOR; METALLIC SUBSTRATE; METALLIC SURFACE; MORPHOLOGICAL CHARACTERIZATION; NANOMETRICS; NUCLEATION SITES; PRECURSOR LAYER; SCANNING AND TRANSMISSION ELECTRON MICROSCOPES; SPUTTERED COATINGS; SUPER CAPACITOR; VERTICALLY ALIGNED CARBON NANOTUBE;

AUGER ELECTRON SPECTROSCOPY; CARBON NANOTUBES; CATALYSIS; CATALYSTS; DIFFUSION; DIFFUSION COATINGS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRON GUNS; ELECTRON MICROSCOPES; METALLIC COMPOUNDS; MONOLAYERS; NUCLEATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 70049085355     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/10/104002     Document Type: Article

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