Low temperature rapid thermal low pressure chemical vapor deposition of 〈111〉 oriented TiN layers from the TiCl4-NH3-H2 gaseous phase

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 421-425

  Bouteville, A ^a   Imhoff, L ^a   Remy, J C ^a  

^a ARTS ET MÉTIERS PARISTECH   (France)

Author keywords

Chemical vapor deposition; Deposition kinetics; Film orientation; Thin film; Titanium nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC RESISTANCE; ELECTROMIGRATION; THIN FILMS; TITANIUM NITRIDE; ULSI CIRCUITS;

FILM ORIENTATION; RAPID THERMAL LOW PRESSURE CHEMICAL VAPOR DEPOSITION (RTLPCVD);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031269841     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00141-X     Document Type: Article

References (6)

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2. R.I. Hegde, R.W. Fiodalice, E.O. Travis, P.J. Tobin, Thin film properties of low pressure chemical vapor deposition TiN barrier for Ultra Large Scale Integration applications, J. Vac. Sci. Technol. B 11 (1993) 1287-1296.
3. 2, submitted for publication.
4. 2 on a patterned oxidized silicon substrate, J. Electrochem. Soc. 143 (1996) 3251-3256.
5. T. Kaizuka, H. Shinriki, N. Takeyasu, T. Ohta, Conformal chemical vapor deposition TiN (111) film formation as an underlayer of Al for highly reliable interconnects, Jpn. J. Appl. Phys. 33 (1994) 470-474.
6. R.W. Fiordalice, R.I. Hegde, H. Kawasaki, Orientation control of chemical vapor deposition TiN film for barrier applications, J. Electrochem. Soc. 143 (1996) 2059-2063.