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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 304, Issue 5-6, 2002, Pages 172-176

Optimum silicon ion dose for 1540 nm photoluminescence from erbium-doped silica thin films formed by MEVVA implantation

(5) Xiao, Zhisong a,b Xu, Fei c Cheng, Guoan a Zhang, Tonghe a Wong, S P b

a BEIJING NORMAL UNIVERSITY (China)

b CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

c FUDAN UNIVERSITY (China)

Author keywords

Erbium; Ion implantation; Photoluminescence; Silica

Indexed keywords

ERBIUM; ION IMPLANTATION; ION SOURCES; NANOCRYSTALLINE SILICON; NANOCRYSTALS; PHOTOLUMINESCENCE; SILICA; SILICON OXIDES; VACUUM APPLICATIONS;

ER LUMINESCENCE; ERBIUM DOPED SILICA; LUMINESCENCE PEAK; METAL VAPOR VACUUM ARCS; NANOCRYSTALLINE SI; PHOTOLUMINESCENCE PROPERTIES; SI NANOCRYSTAL; SIO2 THIN FILMS;

THIN FILMS;

ERBIUM; ION; SILICON DIOXIDE;

ARTICLE; CRYSTAL STRUCTURE; DOSE RESPONSE; FILM; PHOTOLUMINESCENCE; ROOM TEMPERATURE; VACUUM;

EID: 0037131983 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/S0375-9601(02)01364-6 Document Type: Article

Times cited : (1)

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