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Volumn 95, Issue 9, 2009, Pages

Optical and electron beam studies of carrier transport in quasibulk GaN

(9) Lin, Y a Flitsyian, E a Chernyak, L a Malinauskas, T b Aleksiejunas, R b Jarasiunas, K b Lim, W c Pearton, S J c Gartsman, K d

a UNIVERSITY OF CENTRAL FLORIDA (United States)

b VILNIUS UNIVERSITY (Lithuania)

c University of Florida (United States)

d WEIZMANN INSTITUTE OF SCIENCE (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LENGTH; ELECTRON-BEAM-INDUCED CURRENT; GAN LAYERS; IN-SITU; LIGHT-INDUCED TRANSIENT GRATING TECHNIQUE; LIGHT-INDUCED TRANSIENT GRATINGS; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPE; TEMPERATURE-INDUCED; VARIABLE TEMPERATURE;

CRYSTAL GROWTH; ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; GALLIUM ALLOYS; GALLIUM NITRIDE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM;

CARRIER LIFETIME;

EID: 69949188718 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3220062 Document Type: Article

Times cited : (16)

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