Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2549-2552

  Ide, Toshihide ^a   Shimizu, Mitsuaki ^a   Kuo, Jason ^b   Jeganathan, Kulandaivel ^a   Shen, Xu Qiang ^a   Okumura, Hajime ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Uni Light Technology Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FLAT SURFACES; GAN LAYERS; GAN TEMPLATE; GROWTH CONDITIONS; LOW GROWTH RATE; PLASMA-ASSISTED MBE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SPIRAL GROWTH;

EPITAXIAL GROWTH; GROWTH RATE; MOLECULAR BEAM EPITAXY; SURFACE MORPHOLOGY; SURFACE ROUGHNESS;

GALLIUM NITRIDE;

EID: 69949181452     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303343     Document Type: Conference Paper

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