Determining the critcial size of EUV mask substrate defects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Han, Hakseung ^a   Cho, Wonil ^a   Goldberg, Kenneth A ^b   Gullikson, Eric M ^b   Jeon, Chan Uk ^a   Wurm, Stefan ^a  

^a SEMATECH   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

EUV; EUV defect; EUV inspection; EUV masks; Lithography; Printability

Indexed keywords

EUV; EUV DEFECT; EUV INSPECTION; EUV MASK; PRINTABILITY;

DEFECTS; ELECTRON BEAMS; EXPOSURE METERS; LITHOGRAPHY; PHOTOMASKS; PRINTING; SOFTWARE TESTING; SPECIFICATIONS;

SUBSTRATES;

EID: 67149098109     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772590     Document Type: Conference Paper

References (6)

1. Chan-Uk Jeon, C.C. Lin, "Beta-level EUV Mask Blanks for the 32nm Half-Pitch, " EUVL Symposium 2007, Sapporo, Japan, October 31, 2007.
2. K. A. Goldberg, P. P. Naulleau, A. Barty, S. B. Rekawa, C. D. Kemp, R. F. Gunion, F. Salmassi, E. M. Gullikson, E. H. Anderson, H.-S. Han, "Performance of actinic EUVL mask imaging using a zoneplate microscope, " Proc. SPIE 6730, 673051-12 (2007).
3. Andy Ma, Joo-on Park, et al. "SEMATECH EUV Resist Benchmarking Results, " EUVL Symposium 2007, Sapporo, Japan, October 31, 2007.
4. G.-S. Yoon, H. Kim, H.-J. Oh, H.-S. Kim, H.-S. Sim, S.-H. Lee, G.-B. Kim, S.-M. Huh, K. A. Goldberg, A. Barty, S.-S. Kim, H.-K. Cho, "Evaluation of EUV Mask Repair Methods in Si-capping & Ru-capping Blanks, " EUVL Symposium 2007, Sapporo, Japan October 31, 2007.
5. W. Cho, H.-S. Han, K. A. Goldberg, P. A. Kearney, C.-U. Jeon, "Detectability and printability of EUVL mask blank defects for the 32 nm HP node, " Proc. SPIE 6730, 6730131-9 (2007).
6. E.M. Gullikson et al., Proc. SPIE 5374, 791 (2004).