Easily reversible memory switching in Ge-As-Te glasses

Journal of Physics D: Applied Physics

Volumn 29, Issue 7, 1996, Pages 2004-2008

  Prakash, S ^a   Asokan, S ^a   Ghare, D B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT CONTROL; ELECTRIC RESISTANCE; ELECTRODES; QUENCHING; SEMICONDUCTING GERMANIUM COMPOUNDS; SWITCHING; VOLTAGE MEASUREMENT;

CURRENT CONTROLLED ELECTRICAL SWITCHING; CURRENT CONTROLLED NEGATIVE RESISTANCE; FLAT PLATE BOTTOM ELECTRODE; GERMANIUM ARSENIC TELLURIDE GLASSES; INCREMENTAL CURRENT STEPS; MEMORY SWITCHING; POINT CONTACT TOP ELECTRODE; SWITCHING VOLTAGE;

SEMICONDUCTING GLASS;

EID: 0030193482     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/7/037     Document Type: Article

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