The switching phenomenon in amorphous In2Te3 thin films

Vacuum

Volumn 47, Issue 3, 1996, Pages 265-269

  Afifi, M A ^a   Hegab, N A ^a   Bekheet, A E ^a  

^a AIN SHAMS UNIVERSITY   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; X RAY DIFFRACTION;

AMORPHOUS INDIUM TELLURIDE THIN FILM; CONDUCTION ACTIVATION ENERGY; ELECTROTHERMAL MODEL; SWITCHING PHENOMENON; SWITCHING VOLTAGE; SWITCHING VOLTAGE ACTIVATION ENERGY; THICKNESS DEPENDENCE;

SEMICONDUCTING FILMS;

EID: 0030108388     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0042-207X(95)00198-0     Document Type: Article

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