SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 4, 2009, Pages

Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system

(5) Tsuchiya, Yoshinori a Yoshiki, Masahiko a Koga, Junji a Nishiyama, Akira a Koyama, Masato a

a TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL INCORPORATION; AL-IONS; DIFFUSION COEFFICIENTS; EFFECTIVE WORK FUNCTION; FLAT-BAND VOLTAGE; FULLY SILICIDED; INTERFACE DENSITY; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MODULATION EFFECTS; NI SILICIDE; PHASE CHANGE PROCESS; SOLID-PHASE DIFFUSION; THERMAL STABILITY;

ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; ION BOMBARDMENT; ION IMPLANTATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; MODULATION; NICKEL; NICKEL COMPOUNDS; PHASE INTERFACES; SILICIDES; SILICON; THERMODYNAMIC STABILITY; WORK FUNCTION;

ALUMINUM;

EID: 69749127473 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3203998 Document Type: Article

Times cited : (3)

References (16)

1
- 69749098062
- Internatinal Technology Roadmafor Semicondctors (ITRS), Semiconduator Industry Association.
- Internatinal Technology Roadmap for Semicondctors (ITRS), Semiconduator Industry Association, 2007.
- (2007)

2
- 0000776924
- Investigation of Polycrystalline Nickel Suicide Films as a Gate Material
- DOI 10.1149/1.1362551
- M. Qin, V. M. C. Poon, and S. C. H. Ho, J. Electrochem. Soc. 0013-4651 148, G271 (2001). 10.1149/1.1362551 (Pubitemid 33693560)
- (2001) Journal of the Electrochemical Society , vol.148 , Issue.5
- Qin, M.¹ Poon, V.M.C.² Ho, S.C.H.³

3
- 12344313329
- Threshold voltage control in NiSi-Gated MOSFETs through SIIS
- DOI 10.1109/TED.2004.841264
- J. Kedzierski, D. Boyd, C. Cabral, Jr., P. Ronsheim, S. Zafer, P. M. Kozlowski, J. A. Ott, and M. Ieong, IEEE Trans. Electron Devices 0018-9383 52, 39 (2005). 10.1109/TED.2004.841264 (Pubitemid 40118909)
- (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.1 , pp. 39-46
- Kedzierski, J.¹ Boyd, D.² Cabral Jr., C.³ Ronsheim, P.⁴ Zafar, S.⁵ Kozlowski, P.M.⁶ Ott, J.A.⁷ Ieong, M.⁸

4
- 0036923595
- 0163-1918.
- Z. Krivokapic, W. Maszara, K. Achutan, P. King, P. King, J. Gray, M. Sidorow, E. Zhao, J. Zhang, J. Chan, A. Marathe, and M. -R. Lin, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2002, 271.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2002 , pp. 271
- Krivokapic, Z.¹ Maszara, W.² Achutan, K.³ King, P.⁴ King, P.⁵ Gray, J.⁶ Sidorow, M.⁷ Zhao, E.⁸ Zhang, J.⁹ Chan, J.¹⁰ Marathe, A.¹¹ Lin, M.-R.¹²

5
- 69749085679
- 0163-1918.
- Y. H. Kim, C. Cabral, Jr., E. P. Gusev, R. Carruthers, L. Gignac, M. Gribelyuk, E. Cartier, S. Zafar, M. Copel, V. Narayanan, J. Newbury, B. Price, J. Acevedo, P. Jamison, B. Linder, W. Natzle, J. Cai, R. Jammy, and M. Ieong, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2005, 657.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 657
- Kim, Y.H.¹ Cabral Jr., C.² Gusev, E.P.³ Carruthers, R.⁴ Gignac, L.⁵ Gribelyuk, M.⁶ Cartier, E.⁷ Zafar, S.⁸ Copel, M.⁹ Narayanan, V.¹⁰ Newbury, J.¹¹ Price, B.¹² Acevedo, J.¹³ Jamison, P.¹⁴ Linder, B.¹⁵ Natzle, W.¹⁶ Cai, J.¹⁷ Jammy, R.¹⁸ Ieong, M.¹⁹

6
- 53649106666
- 0018-9383,. 10.1109/TED.2008.2003026
- Y. Tsuchiya, M. Yoshiki, J. Koga, A. Nishiyama, M. Koyama, M. Ogawa, and S. Zaima, IEEE Trans. Electron Devices 0018-9383 55, 2648 (2008). 10.1109/TED.2008.2003026
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 2648
- Tsuchiya, Y.¹ Yoshiki, M.² Koga, J.³ Nishiyama, A.⁴ Koyama, M.⁵ Ogawa, M.⁶ Zaima, S.⁷

7
- 21644466972
- 0163-1918.
- K. Takahashi, K. Manabe, T. Ikarashi, N. Ikarashi, T. Hase, T. Yoshihara, H. Watanabe, T. Tatsumi, and Y. Mochizuki, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2004, 91.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2004 , pp. 91
- Takahashi, K.¹ Manabe, K.² Ikarashi, T.³ Ikarashi, N.⁴ Hase, T.⁵ Yoshihara, T.⁶ Watanabe, H.⁷ Tatsumi, T.⁸ Mochizuki, Y.⁹

8
- 33645465482
- 0741-3106,. 10.1109/LED.2005.861404
- J. A. Kittl, M. A. Pawlak, A. Lauwers, C. Demeurisse, K. Opsomer, K. G. Anil, C. Vrancken, M. J. H. van Dal, A. Veloso, S. Kubicek, P. Absil, K. Maex, and S. Biesemans, IEEE Electron Device Lett. 0741-3106 27, 34 (2006). 10.1109/LED.2005.861404
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 34
- Kittl, J.A.¹ Pawlak, M.A.² Lauwers, A.³ Demeurisse, C.⁴ Opsomer, K.⁵ Anil, K.G.⁶ Vrancken, C.⁷ Van Dal, M.J.H.⁸ Veloso, A.⁹ Kubicek, S.¹⁰ Absil, P.¹¹ Maex, K.¹² Biesemans, S.¹³

9
- 69749108175
- H. Y. Yu, J. A. Kittl, A. Lauwers, R. Singanamalla, C. Demeurisse, S. Kubicek, E. Augendre, A. Veloso, S. Brus, C. Vrancken, T. Hoffmann, S. Mertens, B. Onsia, R. Verbeeck, M. Demand, A. Rothchild, B. Froment, M. van Dal, K. De. Meyer, M. F. Li, J. D. Chen, M. Jurczak, P. P. Absil, and S. Biesemans, Tech. Dig. VLSI-Symp. 2006, 120.
- Tech. Dig. VLSI-Symp. , vol.2006 , pp. 120
- Yu, H.Y.¹ Kittl, J.A.² Lauwers, A.³ Singanamalla, R.⁴ Demeurisse, C.⁵ Kubicek, S.⁶ Augendre, E.⁷ Veloso, A.⁸ Brus, S.⁹ Vrancken, C.¹⁰ Hoffmann, T.¹¹ Mertens, S.¹² Onsia, B.¹³ Verbeeck, R.¹⁴ Demand, M.¹⁵ Rothchild, A.¹⁶ Froment, B.¹⁷ Van Dal, M.¹⁸ De. Meyer, K.¹⁹ Li, M.F.²⁰ more..

10
- 17144382061
- Ab initio study of metal gate electrode work function
- DOI 10.1063/1.1865349, 073118
- S. Park, L. Colombo, Y. Nishi, and K. Cho, Appl. Phys. Lett. 0003-6951 86, 073118 (2005). 10.1063/1.1865349 (Pubitemid 40509467)
- (2005) Applied Physics Letters , vol.86 , Issue.7 , pp. 1-3
- Park, S.¹ Colombo, L.² Nishi, Y.³ Cho, K.⁴

11
- 0141512121
- 0255-5476,. 10.4028/www.scientific.net/MSF.269-272.601
- F. Takahashi and A. L. Greer, Mater. Sci. Forum 0255-5476 269-272, 601 (1998). 10.4028/www.scientific.net/MSF.269-272.601
- (1998) Mater. Sci. Forum , vol.269-272 , pp. 601
- Takahashi, F.¹ Greer, A.L.²

12
- 0033700524
- On the Ni-Si phase transformation with/without native oxide
- DOI 10.1016/S0167-9317(99)00521-3
- P. S. Lee, D. Mangelinck, K. L. Pey, J. Ding, J. Dai, C. S. Ho, and A. See, Microelectron. Eng. 0167-9317 51-52, 583 (2000). 10.1016/S0167-9317(99) 00521-3 (Pubitemid 30880456)
- (2000) Microelectronic Engineering , vol.51 , pp. 583-594
- Lee, P.S.¹ Mangelinck, D.² Pey, K.L.³ Ding, J.⁴ Dai, J.Y.⁵ Ho, C.S.⁶ See, A.⁷

13
- 34548607560
- Phase and structure transformations in the titanium interlayer during the nickel silicidation on Si(1 0 0) substrate
- DOI 10.1016/j.susc.2007.04.128, PII S0039602807004505, ECOSS-24
- V. I. Trofimov, N. M. Sushkova, and J. -I. Kim, Surf. Sci. 0039-6028 601, 4423 (2007). 10.1016/j.susc.2007.04.128 (Pubitemid 47410188)
- (2007) Surface Science , vol.601 , Issue.18 , pp. 4423-4427
- Trofimov, V.I.¹ Sushkova, N.M.² Kim, J.-I.³

14
- 34548844439
- Ni-Pt silicide formation through Ti mediating layers
- DOI 10.1016/j.mee.2007.06.003, PII S0167931707006181
- P. Besser, C. Lavoie, A. Ozcan, C. Murray, J. Strane, K. Wong, M. Gribelyuk, Y. -Y. Wang, C. Parks, and J. Jordan-Sweet, Microelectron. Eng. 0167-9317 84, 2511 (2007). 10.1016/j.mee.2007.06.003 (Pubitemid 47445858)
- (2007) Microelectronic Engineering , vol.84 , Issue.11 , pp. 2511-2516
- Besser, P.¹ Lavoie, C.² Ozcan, A.³ Murray, C.⁴ Strane, J.⁵ Wong, K.⁶ Gribelyuk, M.⁷ Wang, Y.-Y.⁸ Parks, C.⁹ Jordan-Sweet, J.¹⁰

15
- 34247139250
- 2 gate stacks measured with X-ray photoelectron spectroscopy
- DOI 10.1016/j.microrel.2007.01.064, PII S002627140700073X
- Y. Y. Lebedinskii and A. V. Zenkevich, Microelectron. Reliab. 0026-2714 47, 649 (2007). 10.1016/j.microrel.2007.01.064 (Pubitemid 46602428)
- (2007) Microelectronics Reliability , vol.47 , Issue.4-5 SPEC. ISSUE , pp. 649-652
- Lebedinskii, Yu.Yu.¹ Zenkevich, A.V.²

16
- 0034233572
- 1463-9076,. 10.1039/b001381l
- A. Onda, T. Komatsu, and T. Yashima, Phys. Chem. Chem. Phys. 1463-9076 2, 2999 (2000). 10.1039/b001381l
- (2000) Phys. Chem. Chem. Phys. , vol.2 , pp. 2999
- Onda, A.¹ Komatsu, T.² Yashima, T.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.