Diffusion of Mn in GaAs studied by quantitative time-of-flight secondary ion mass spectrometry

Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

  Goacher, Robyn E ^a   Hegde, Shridhar ^a   Luo, Hong ^a   Gardella Jr , Joseph A ^a  

^a UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILE; DIFFUSION COEFFICIENTS; EPITAXIAL STRUCTURE; ERROR FUNCTION; GAAS; HIGHER TEMPERATURES; IMPLANTATION DOSE; MN CONCENTRATIONS; SPINTRONIC APPLICATIONS; TEMPERATURE RANGE; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY;

ACTIVATION ENERGY; ANNEALING; DIFFUSION; EPITAXIAL FILMS; GALLIUM ALLOYS; GROWTH (MATERIALS); MANGANESE COMPOUNDS; MASS SPECTROMETERS; NEGATIVE IONS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SPECTROMETRY;

MANGANESE;

EID: 69749105899     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3200961     Document Type: Article

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