Tunable THz plasmon resonances in InGaAs/InP HEMT

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7311, Issue , 2009, Pages

  Peale, R E ^a   Saxena, H ^a   Buchwald, W R ^b   Dyer, G C ^c   Allen Jr , S J ^c  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Detector; HEMT; Plasmon; Terahertz; Two dimensional electron gas

Indexed keywords

ARRAY DETECTORS; ELECTRON-BEAM LITHOGRAPHY; FRAME-RATE; GATE CONTACT; HEMT; INGAAS/INP; IR LASERS; METAL GRATING; NARROW BANDS; NEGATIVE GATE; PHOTORESPONSES; PLASMON RESONANCES; RESONANCE FREQUENCIES; RESONANT ABSORPTION; SPECTRAL IMAGING; TERAHERTZ; THZ RADIATION; VOLTAGE-TUNABLE;

DETECTORS; ELECTRIC CONDUCTIVITY OF GASES; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GAS ABSORPTION; HIGH ELECTRON MOBILITY TRANSISTORS; PLASMONS; SURFACE PLASMON RESONANCE; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 69649096397     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.818520     Document Type: Conference Paper

References (7)

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6. Saxena, H., Peale, R. E., and Buchwald, W. R., "Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron-mobility transistor," J. Appl. Phys. (2009), accepted.
7. Buchwald, W. R., Saxena, H., Peale, R. E., "Tunable far-IR detectors/filters based on plasmons in two-dimensional electron gases in InGaAs/InP heterostructures," Proc. SPIE 6678-32 (2007).