Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate

Applied Physics Letters

Volumn 95, Issue 8, 2009, Pages

  Alonso, J ^a   Fdez Gubieda, M L ^a   Sarmiento, G ^a   Barandiaran J M ^a   Svalov, A ^a   Orue, I ^a   Chaboy, J ^b   Barquín, L Fernández ^c   Meneghini, C ^d   Neisius, T ^e   Kawamura, N ^f  

^a UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^b UNIVERSITY OF ZARAGOZA   (Spain)

^c UNIVERSITY OF CANTABRIA   (Spain)

^d ROMA TRE UNIVERSITY   (Italy)

^e AIX MARSEILLE UNIVERSITY   (France)

^f JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INTERFACES; CURRENT SWITCHING; ELECTRONIC CHANNELS; ELECTRONIC LOCALIZATION; FE ATOMS; GRANULAR THIN FILMS; SI SUBSTRATES; THERMAL EVOLUTION; X-RAY ABSORPTION SPECTROSCOPY;

ABSORPTION SPECTROSCOPY; AMORPHOUS FILMS; ATOMIC SPECTROSCOPY; DEPOSITION; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILVER; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; X RAY SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 69549120235     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3205124     Document Type: Article

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