Boron oxide encapsulated vertical bridgman: A method for preventing crystal-crucible contact in the CdZnTe growth

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 798-801

  Zappettini, Andrea ^a   Zha, Mingzheng ^a   Pavesi, Maura ^a,b   Zanichelli, Massimiliano ^a,b   Bissoli, Francesco ^a   Zanotti, Lucio ^a   Auricchio, Natalia ^c,d   Caroli, Ezio ^d  

^a IMEM CNR   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF FERRARA   (Italy)

^d OSSERVATORIO ASTRONOMICO DI BOLOGNA   (Italy)

Author keywords

Cadmium zinc telluride; Crystal growth; Semi conductor growth; Semiconductor materials; Semiconductor radiation detectors

Indexed keywords

CRYSTAL GROWTH; RADIATION DETECTORS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS;

CADMIUM ZINC TELLURIDE; SEMICONDUCTOR RADIATION DETECTORS;

CADMIUM ALLOYS;

EID: 34548090145     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.902361     Document Type: Conference Paper

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