P-type Si-nanowire-based field-effect transistors for electric detection of a biomarker: Matrix metalloproteinase-9

Journal of the Korean Physical Society

Volumn 55, Issue 1, 2009, Pages 232-235

  Lee, Seung Hyun ^a   Jeon, Kye Jin ^a   Lee, Wooyoung ^a   Choi, Ahmi ^a   Jung, Hyo Il ^a   Kim, Cheol Joo ^b   Jo, Moon Ho ^b  

^a Yonsei University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Field effect transistor (FET); Gate effect; Matrix metalloproteinase 9 (MMP 9); Nanowire; Treptavidin biotin binding

Indexed keywords

EID: 69249182602     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.55.232     Document Type: Article

References (22)

1. Y. Cui, Q. Wei, H. Park and C. M. Lieber, Science 293, 1289 (2001).
2. F. Patolsky, G. Zheng, O. Hayden, M. Lakadamyali, X. Zhuang and C. M. Lieber, Electrical detection of single viruses, Proc. Natl. Acad. Sci. USA 101, 14017 (2004).
3. J. Hahm and C. M. Lieber, Nano Lett. 4, 51 (2004).
4. W. U. Wang, C. Chen, K. Lin, Y. Fang and C. M. Lieber, Proc. Natl. Acad. Sci. USA 102, 3208 (2005).
5. G. Zheng, F. Patolsky, Y. Cui, W. U. Wang and C. M. Lieber, Nat. Biotechnol. 23, 1294 (2005).
6. Y. L. Bunimovich, Y. S. Shin, W.-S. Yeo, M. Amori, G. Kwong and J. R. Heath, J. Am. Chem. Soc. 128, 16323 (2006).
7. Y. Lee, J. Kim and J. Park, J. Korean Phys. Soc. 54, 1769 (2009).
8. P. Estrela, P. Li, D. Keighley and P. Migliorato, J. Korean Phys. Soc. 54, 498 (2009).
9. R. Visse and H. Nagase, Circ. Res. 92, 827 (2003).
10. I. Stamenkovic, Semin. Cancer Biol. 10, 415 (2000).
11. R. A. Cairns, R. Khokha and R. P. Hill, Curr. Mol. Med. 3, 659 (2003).
12. M. Wilchek and E. A. Bayer, Methods Enzymol. 184, 49 (1990).
13. Y. S. Woo, K. Kang, M.-H. Jo, J.-M. Jeon and M. Kim, Appl. Phys. Lett. 91, 223107 (2007).
14. S.-W. Chung, J.-Y. Yu and J. R. Heath, Appl. Phys. Lett. 76, 2068 (2000).
15. Y. Cui, X. Duan, J. Hu and C. M. Lieber, J. Phys. Chem. B 104, 5213 (2000).
16. M. C. McAlpine, R. S. Friedman, S. Jin, K. Lin, W. U. Wang and C. M. Lieber, Nano Lett. 3, 1531 (2003).
17. R. Martel, T. Schmidt, H. R. Shea and T. Hertel, Appl. Phys. Lett. 73, 2447 (1998).
18. W. I. Park, J. S. Kim and G.-C. Yi, Appl. Phys. Lett. 85, 5052 (2004).
19. Y. Huang, X. Duan, Y. Cui and C. M. Lieber, Nano Lett. 2, 101 (2002).
20. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era (Lattice Press Sunset Beach, CA, 1986) Vols. 1-2.
21. S. M. Sze, Physics of Semiconductor Device (John Wiley & Sons New York, 1981).
22. J. P. Gambino and E. G. Colgan, Mater Chem. Phys. 52, 99 (1998).