메뉴 건너뛰기




Volumn 12, Issue 7, 2009, Pages

Air stable ambipolar organic field-effect transistors and complementary-like inverters prepared with surface-modified gate dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

AIR STABILITY; AIR STABLE; AMBIPOLAR; ELECTRICAL CHARACTERISTIC; ELECTRON TRAPPING SITES; HIGH GAIN; N-CHANNEL; ORGANIC FIELD-EFFECT TRANSISTORS; SURFACE-MODIFIED;

EID: 69149109318     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3117250     Document Type: Article
Times cited : (7)

References (26)
  • 1
    • 34248339106 scopus 로고    scopus 로고
    • Electron and ambipolar transport in organic field-effect transistors
    • DOI 10.1021/cr0501543
    • J. Zaumseil and H. Sirringhaus, Chem. Rev. (Washington, D.C.) 0009-2665, 107, 1296 (2007). 10.1021/cr0501543 (Pubitemid 46736540)
    • (2007) Chemical Reviews , vol.107 , Issue.4 , pp. 1296-1323
    • Zaumseil, J.1    Sirringhaus, H.2
  • 2
    • 23044480892 scopus 로고    scopus 로고
    • Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics
    • DOI 10.1002/adma.200500517
    • A. Facchetti, M. H. Yoon, and T. J. Marks, Adv. Mater. (Weinheim, Ger.) 0935-9648, 17, 1705 (2005). 10.1002/adma.200500517 (Pubitemid 41055422)
    • (2005) Advanced Materials , vol.17 , Issue.14 , pp. 1705-1725
    • Facchetti, A.1    Yoon, M.-H.2    Marks, T.J.3
  • 6
    • 33847638384 scopus 로고    scopus 로고
    • Complementary inverter using high mobility air-stable perylene di-imide derivatives
    • DOI 10.1063/1.2695873
    • M. M. Ling, Z. Bao, P. Erk, M. Koenemann, and M. Gomez, Appl. Phys. Lett. 0003-6951, 90, 093508 (2007). 10.1063/1.2695873 (Pubitemid 46355768)
    • (2007) Applied Physics Letters , vol.90 , Issue.9 , pp. 093508
    • Ling, M.-M.1    Bao, Z.2    Erk, P.3    Koenemann, M.4    Gomez, M.5
  • 13
    • 40549144426 scopus 로고    scopus 로고
    • Influence of H2 O and O2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on Si O2 gate-insulator surface
    • DOI 10.1063/1.2890853
    • D. Kumaki, T. Umeda, and S. Tokito, Appl. Phys. Lett. 0003-6951, 92, 093309 (2008). 10.1063/1.2890853 (Pubitemid 351357446)
    • (2008) Applied Physics Letters , vol.92 , Issue.9 , pp. 093309
    • Kumaki, D.1    Umeda, T.2    Tokito, S.3
  • 16
    • 36349011837 scopus 로고    scopus 로고
    • Air-stable n -channel organic thin-film transistors with high field-effect mobility based on N, N′ -bis(heptafluorobutyl)-3,4:9,10- perylene diimide
    • DOI 10.1063/1.2803073
    • J. H. Oh, S. Liu, Z. Bao, R. Schmidt, and F. Würthner, Appl. Phys. Lett. 0003-6951, 91, 212107 (2007). 10.1063/1.2803073 (Pubitemid 350159045)
    • (2007) Applied Physics Letters , vol.91 , Issue.21 , pp. 212107
    • Oh, J.H.1    Liu, S.2    Bao, Z.3    Schmidt, R.4    Wurthner, F.5
  • 18
  • 19
    • 51749101698 scopus 로고    scopus 로고
    • 0003-6951,. 10.1063/1.2980421
    • F. C. Chen and C. H. Liao, Appl. Phys. Lett. 0003-6951, 93, 103310 (2008). 10.1063/1.2980421
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 103310
    • Chen, F.C.1    Liao, C.H.2
  • 20
    • 33846782900 scopus 로고    scopus 로고
    • Air-stable n-channel organic field-effect transistors based on N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide
    • DOI 10.1016/j.cplett.2006.12.106, PII S0009261407000140
    • Y. Hosoi, D. Tsunami, H. Ishii, and Y. Furukawa, Chem. Phys. Lett. 0009-2614, 436, 139 (2007). 10.1016/j.cplett.2006.12.106 (Pubitemid 46216978)
    • (2007) Chemical Physics Letters , vol.436 , Issue.1-3 , pp. 139-143
    • Hosoi, Y.1    Tsunami, D.2    Ishii, H.3    Furukawa, Y.4
  • 23
    • 33847020460 scopus 로고    scopus 로고
    • N-channel, ambipolar, and p-channel organic heterojunction transistors fabricated with various film morphologies
    • DOI 10.1002/adfm.200600950
    • J. Shi, H. Wang, D. Song, H. Tian, Y. Geng, and D. Yan, Adv. Funct. Mater. 1616-301X, 17, 397 (2007). 10.1002/adfm.200600950 (Pubitemid 46262650)
    • (2007) Advanced Functional Materials , vol.17 , Issue.3 , pp. 397-400
    • Shi, J.1    Wang, H.2    Song, D.3    Tian, H.4    Geng, Y.5    Yan, D.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.