Epitaxial growth of graphene on 6H-SiC (0001) by thermal annealing

Chinese Physics Letters

Volumn 26, Issue 8, 2009, Pages

  Tang, Jun ^a   Liu, Zhong Liang ^a   Kang, Chao Yang ^a   Pan, Hai Bin ^a   Wei, Shi Qiang ^a   Xu, Peng Shou ^a   Gao, Yu Qiang ^b   Xu, Xian Gang ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFRACTION; MOLECULAR BEAM EPITAXY; SILICON CARBIDE;

ATOMIC-FORCE-MICROSCOPY; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; MOLECULAR-BEAM EPITAXY; NOMINAL THICKNESS; REFLECTION HIGH ENERGY DIFFRACTION; STRUCTURE AND MORPHOLOGY; THERMAL-ANNEALING;

GRAPHENE;

EID: 68949218930     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/8/088104     Document Type: Article

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