Accuracy of transfer matrix approaches for solving the effective mass schrödinger equation

IEEE Journal of Quantum Electronics

Volumn 45, Issue 9, 2009, Pages 1059-1067

  Jirauschek, Christian ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Eigenvalues and eigenfunctions; MOS devices; Numerical analysis; Quantum theory; Quantum effect semiconductor devices; Quantum well devices; Semiconductor heterojunctions; Tunneling

Indexed keywords

AIRY FUNCTION; ANALYTICAL MODEL; DINGER EQUATION; EFFECTIVE MASS; HETEROSTRUCTURE DEVICES; NUMERICAL COSTS; NUMERICAL PROBLEMS; ONE-DIMENSIONAL POTENTIAL; POSITION-DEPENDENT EFFECTIVE MASS; QUANTUM-EFFECT SEMICONDUCTOR DEVICES; QUANTUM-WELL DEVICES; SEMICONDUCTOR HETEROJUNCTIONS; TRANSFER MATRIX APPROACH; TUNNELING; QUANTUM EFFECT SEMICONDUCTOR DEVICES; QUANTUM WELL DEVICE;

FINITE DIFFERENCE METHOD; HETEROJUNCTIONS; MOS DEVICES; NUMBER THEORY; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SWITCHES; TRANSFER MATRIX METHOD; TUNNELING (EXCAVATION); WIND TUNNELS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON TUNNELING; NUMERICAL ANALYSIS; NUMERICAL METHODS;

EIGENVALUES AND EIGENFUNCTIONS; SEMICONDUCTOR JUNCTIONS;

EID: 68949194690     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2020998     Document Type: Article

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