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Volumn 38, Issue 9, 2009, Pages 1921-1925
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Low fatigue in epitaxial Pb(Zr 0.2Ti 0.8)O 3 on Si substrates with LaNiO 3 electrodes by RF sputtering
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Author keywords
Domain epitaxy; Oxide thin film; Sputtering
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Indexed keywords
ATOMIC FORCE MICROSCOPES;
BOTTOM ELECTRODES;
COERCIVE FIELD;
DOMAIN EPITAXY;
ELECTRICAL ENDURANCE;
ELECTRICAL MEASUREMENT;
EPITAXIAL PZT;
HIGH DENSITY DATA STORAGE;
ORIENTATION RELATIONSHIP;
OXIDE THIN FILM;
PEROVSKITE PHASE;
POLARIZATION LOSS;
POTENTIAL RECORDING;
PROBE-BASED;
PZT;
PZT FILM;
PZT THIN FILM;
RADIO-FREQUENCY SPUTTERING;
REMANENT POLARIZATION;
RF-SPUTTERING;
SI SUBSTRATES;
SI(0 0 1);
SINGLE-CRYSTAL SUBSTRATES;
SMOOTH SURFACE;
SRTIO;
SWITCHING CYCLES;
TEM;
TIN BUFFER LAYERS;
CRYSTAL GROWTH;
ELECTRODES;
EPITAXIAL FILMS;
FILM PREPARATION;
LEAD;
LEAD ALLOYS;
OXIDE MINERALS;
PEROVSKITE;
PIEZOELECTRIC ACTUATORS;
PIEZOELECTRIC TRANSDUCERS;
PLATINUM;
POLARIZATION;
SEMICONDUCTING LEAD COMPOUNDS;
SILICON;
STRONTIUM ALLOYS;
SUBSTRATES;
THIN FILM DEVICES;
TITANIUM COMPOUNDS;
TITANIUM NITRIDE;
TRANSMISSION ELECTRON MICROSCOPY;
ZIRCONIUM;
PIEZOELECTRIC MATERIALS;
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EID: 68949151589
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-009-0836-x Document Type: Article |
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Times cited : (5)
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References (19)
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