Stability and read/write characteristics of nano ferroelectric domains

Ferroelectrics

Volumn 259, Issue 1, 2001, Pages 289-298

  No, Kwangsoo ^a   Song, Han Wook ^a   Hong, Jongin ^a   Woo, Jungwon ^a   Shin, Hyunjung ^b   Hong, Seungbum ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

AFM; domains; PZT thin films; retention

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPES; DOMAINS; ELECTRICAL TREATMENT; LINEAR DEPENDENCE; NANO-FERROELECTRIC DOMAINS; ORIENTED CRYSTALS; PB(ZR , TI)O; PZT; PZT THIN FILMS; READ/WRITE CHARACTERISTICS; RETENTION; RETENTION CHARACTERISTICS; RETENTION TIME; SUBMICRON SIZE;

FERROELECTRIC MATERIALS; FERROELECTRICITY; LEAD; THIN FILMS; VAPOR DEPOSITION; ZIRCONIUM;

CRYSTAL ORIENTATION;

EID: 68849124189     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190108008750     Document Type: Conference Paper

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