SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 38, Issue 8, 2009, Pages 1684-1689

HgCdTe p-on-n focal-plane array fabrication using arsenic incorporation during MBE growth

(4) Gravrand, O a Ballet, Ph a Baylet, J a Baier, N a

a CEA GRENOBLE (France)

Author keywords

As doping; CdHgTe; Focal plane array; Molecular beam epitaxy; MWIR photodiode

Indexed keywords

AS DOPING; CDHGTE; FOCAL-PLANE ARRAY; MOLECULAR-BEAM EPITAXY; MWIR PHOTODIODE;

ARSENIC; CADMIUM COMPOUNDS; CELL MEMBRANES; CRYSTAL GROWTH; DESIGN; DOPING (ADDITIVES); FABRICATION; FOCUSING; HETEROJUNCTIONS; MERCURY COMPOUNDS; MOLECULAR BEAMS; PHOTODIODES; SEMICONDUCTOR DIODES;

AVALANCHE DIODES;

EID: 68749085855 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0794-3 Document Type: Conference Paper

Times cited : (9)

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