Incorporation of dopants and native defects in bulk Hg1-xCdxTe crystals and epitaxial layers

Journal of Crystal Growth

Volumn 161, Issue 1-4, 1996, Pages 64-72

  Vydyanath, H R ^a  

^a AEROJET ROCKETDYNE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTALS; DOPING (ADDITIVES); EPITAXIAL GROWTH;

DOPANTS; EPITAXIAL LAYERS; SHOCKLEY-READ CENTERS;

MERCURY AMALGAMS;

EID: 0030123329     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00613-3     Document Type: Article

References (37)

1. P.R. Norton, Proc. SPIE (USA) 2274 (1994) 82.
2. H.R. Vydyanath, J. Vac. Sci. Technol B (USA) 9 (1991) 1716.
3. H.R. Vydyanath, J. Elec. Chem. Soc. 128 (1981) 2609.
4. H.R. Vydyanath, J.C. Donovan and D. Nelson, J. Electrochem. Soc. (USA) 128 (1981) 2625.
5. F.A. Kröger, The Chemistry of Imperfect Crystals, 2nd revised ed., Vol. 2 (North-Holland, Amsterdam, 1974).
6. D. Shaw, Semicond. Sci. Technol. 9 (1994) 1729.
7. H. Weiedemeier and Y.G. Sha, J. Electron. Mater. 19 (1990) 761.
8. Y. Marfaing, J. Vac. Sci. Technol. B (USA) 10 (1992) 1444.
9. C.D. Smith, P. Rice-Evans and N. Shaw, Phys. Rev. Lett. 72 (1994) 1108.
10. M. Neubert, R. Krause-Rehberg, Th. Abgarjan, P. Gille, W. Hoerstel and K. Jacobs, to be published.
11. H.R. Vydyanath and C.H. Hiner, J. Appl. Phys. 65 (1989) 3080.
12. P. Capper, in: Properties of Narrow Gap Cadmium-based Compounds, Emis Data Reviews Series No. 10, Ed. P. Capper (INSPEC, UK, 1994) p. 151.
13. H.R. Vydyanath, J. Electrochem. Soc. 128 (1981) 2619.
14. H.R. Vydyanath and F.A. Kröger, J. Electron. Mater. 11 (1982) 111.
15. H.R. Vydyanath, R.C. Abbott and D.A. Nelson, J. Appl. Phys. 54 (1983) 1323.
16. Y. Marfaing, in: Properties of Narrow Gap Cadmium-based Compounds, Emis Data Reviews Series No. 10, Ed. P. Capper (INSPEC, UK, 1994) p. 158.
17. T. Tung, M.H. Kalisher, A.P. Stevens and P.E. Herning, Mater. Res. Soc. Symp. 90 (1987) 321.
18. L. Colombo, G.H. Westphal, P.K. Liao, M.C. Chen and H.F. Schaake, Proc. SPIE (USA) 1683 (1992) 33.
19. P. Capper, in: Properties of Narrow Gap Cadmium-based Compounds, Emis Data Reviews Series No. 10, Ed. P. Capper (INSPEC, UK, 1994) p. 163.
20. T. Tung, L.V. De Armond, R.F. Herald, P.E. Herning, M.H. Kalisher, D.A. Olson, R.F. Risser, A.P. Stevens and S.J. Tighe, in: Proc. SPIE (USA) 1735 (1992) 109.
21. H.R. Vydyanath, J.A. Ellsworth and C.M. Devaney, J. Electron. Mater. 16 (1987) 13.
22. H.R. Vydyanath, Semicond. Sci. Technol 5 (1990) S213.
23. M.H. Kalisher, J. Crystal Growth 70 (1984) 365.
24. P. Capper, J.J.G. Gosney, C.L. Jones and I. Kenworthy, J. Crystal Growth 71 (1985) 57.
25. H.R. Vydyanath, L.S. Lichtmann, S. Sivananthan, P.S. Wijewarnasuriya and J.P. Faurie, J. Electron. Mater. 24 (1995) 625.
26. D. Chandra, M.W. Goodwin, M.C. Chen and J.A. Dodge, J. Electron. Mater. 22 (1993) 1033.
27. L.O. Bubulac, D.D. Edwall and C.R. Viswanathan, J. Vac. Sci. Technol B 9 (1991) 1695.
28. H.R. Vydyanath, J. Electron. Mater. 24 (1995) 1275.
29. J.H. Tregilgas, in: Properties of Narrow Gap Cadmium-based Compounds, Emis Data Reviews Series No. 10, Ed. P. Capper (INSPEC, UK, 1994) p. 185.
30. J.H. Tregilgas, in: Properties of Narrow Gap Cadmium-based Compounds, Emis Data Reviews Series No. 10, Ed. P. Capper (INSPEC, UK, 1994) p. 181.
31. H.R. Vydyanath, J.A. Ellsworth, J.J. Kennedy, B. Dean, C.J. Johnson, G.T. Neugebauer, J. Sepich and P.K. Liao, J. Vac. Sci. Technol. B 10 (1992) 1476.
32. H.R. Vydyanath, J.A. Ellsworth, J.B. Parkinson, J.J. Kennedy, B. Dean, C.J. Johnson, G.T. Neugebauer, J. Sepich and P.K. Liao, J. Electron. Mater. 22 (1993) 1073.
33. V. Leute and W. Stratmann, Z. Phys. Chem. 90 (1974) 172.
34. M.F.S. Tang and D.A. Stevenson, Appl. Phys. Lett. (USA) 50 (1987) 1272.
35. V.C. Lopes, A.J. Syllaios and M.C. Chen, Semicond. Sci. Technol. 8 (1993) 824.
36. M.A. Berding, M. van Schilfgaarde and A. Sher, Phys. Rev. B 50 (1994) 1519.
37. M.A. Berding, A. Sher and M. van Schilfgaarde, J. Electron. Mater., accepted for publication.