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Volumn 321, Issue 21, 2009, Pages 3595-3599
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Combinatorial fabrication and magnetic properties of homoepitaxial Co and Li co-doped NiO thin-film nanostructures
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Author keywords
Combinatorial PLD; Dilute magnetic semiconductor; MOKE
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Indexed keywords
BAND GAPS;
BINARY COMPOSITION;
CO-DOPED;
COBALT CONCENTRATION;
COMBINATORIAL PLD;
DILUTE MAGNETIC SEMICONDUCTOR;
GRAZING-INCIDENCE X-RAY DIFFRACTION;
HOMOEPITAXIAL;
HOMOEPITAXIAL GROWTH;
KERR ROTATION;
LASER MOLECULAR BEAM EPITAXY;
LINEAR DECREASE;
LINEAR VARIATION;
LOW TEMPERATURES;
MAGNETO-OPTICAL KERR EFFECTS;
MGO(1 0 0);
MOKE;
NANO-STRUCTURED;
OPTICAL TRANSPARENCY;
PHOTON-ENERGY DEPENDENCY;
ROOM TEMPERATURE;
SMOOTH SURFACE;
SPIN STATE;
THIN LAYERS;
THIN-FILMS;
ANTIFERROMAGNETISM;
ATOMIC FORCE MICROSCOPY;
CHARGE TRANSFER;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
EPITAXIAL LAYERS;
FERROMAGNETISM;
ION EXCHANGE;
KERR MAGNETOOPTICAL EFFECT;
LIGHT TRANSMISSION;
MAGNETIC FIELD EFFECTS;
MAGNETIC PROPERTIES;
MAGNETIC SEMICONDUCTORS;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
NICKEL;
NICKEL OXIDE;
OPTICAL KERR EFFECT;
OXIDE FILMS;
PROGRAMMABLE LOGIC CONTROLLERS;
SEMICONDUCTING ANTIMONY;
SEMICONDUCTOR GROWTH;
SPIN DYNAMICS;
SUBSTRATES;
COBALT;
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EID: 68549122659
PISSN: 03048853
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jmmm.2009.06.081 Document Type: Article |
Times cited : (9)
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References (28)
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