Incidence-angle dependent Cs incorporation in Si during low-energy bombardment: A dynamic computer simulation study

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 16, 2009, Pages 2608-2611

  Gnaser, Hubert ^a  

^a University of Koblenz Landau   (Germany)

Author keywords

Computer simulation; Cs irradiation; Silicon; Sputtering

Indexed keywords

ANGLE-DEPENDENT; CS IRRADIATION; FLUENCES; GRADUAL CHANGES; IMPACT ANGLES; IMPACT ENERGY; INCIDENCE ANGLES; IRRADIATION CONDITIONS; IRRADIATION ENERGY; LOW ENERGIES; MAXIMUM VALUES; MONTE CARLO CODES; NORMAL INCIDENCE; PARTIAL SPUTTERING; PREFERENTIAL SPUTTERING; SI ATOMS; STATIONARY STATE; SURFACE CONCENTRATION; TARGET COMPOSITION;

ATOMS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; COMPUTER SIMULATION LANGUAGES; IRRADIATION; SILICON; SPUTTERING;

CESIUM;

EID: 68349146269     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.05.011     Document Type: Article

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