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Journal of the Korean Physical Society

Volumn 54, Issue 6, 2009, Pages 2464-2467

Internal efficiency of staggered InGaN/InGaN quantum-well light-emitting diodes

(4) Park, Seoung Hwan a Ahn, Doyeol b Bun Hei, Koo c Jong Wook, Kim c

a Catholic University of Daegu (South Korea)

b University of Seoul (South Korea)

c WOOREE LST Co Ltd (South Korea)

Author keywords

GaN; InGaN; Internal efficiency; Light emitting diode; Quantum well; Staggered structure

Indexed keywords

EID: 68149164635 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: 10.3938/jkps.54.2464 Document Type: Article

Times cited : (1)

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