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Volumn 83, Issue 9, 2009, Pages 1446-1453

The circuit point of view of the temperature dependent open circuit voltage decay of the solar cell

Author keywords

Circuit level simulation; Minority carrier lifetime; Open circuit voltage decay technique; Porous Si based solar cell

Indexed keywords

ANALYTICAL METHOD; CIRCUIT LEVEL SIMULATION; DIFFUSION CAPACITANCE; EQUIVALENT ELECTRICAL CIRCUITS; EXTRACTION TECHNIQUES; MINORITY CARRIER LIFETIME; MINORITY CARRIER LIFETIMES; MONOCHROMATIC LIGHT; OPEN CIRCUIT VOLTAGE DECAY TECHNIQUE; OPEN CIRCUIT VOLTAGE DECAYS; OPEN CIRCUITS; PHOTO-INDUCED; POROUS SI; POROUS SI BASED SOLAR CELL; TEMPERATURE DEPENDENT; TEMPERATURE REGIONS;

EID: 67651124906     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2009.03.009     Document Type: Article
Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.