Comparison of minority carrier diffusion length measurements in silicon solar cells by the photo-induced open-circuit voltage decay (OCVD) with different excitation sources

Renewable Energy

Volumn 20, Issue 1, 2000, Pages 65-74

  Stutenbaeumer, Ulrich ^a   Lewetegn, Elias ^a  

^a ADDIS ABABA UNIVERSITY   (Ethiopia)

Author keywords

Diffusion length; Minority carrier lifetime; Photo induced open circuit voltage decay; Silicon photovoltaic solar cells

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; DIFFUSION; ELECTRIC EXCITATION; LASERS; POLYCRYSTALLINE MATERIALS; STROBOSCOPES; XENON;

DIFFUSION LENGTH; EXCITATION SOURCES; MINORITY CARRIER LIFETIME; PHOTO INDUCED OPEN CIRCUIT VOLTAGE DECAY; XENON STROBOSCOPE LAMP;

SILICON SOLAR CELLS;

EID: 0034190387     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0960-1481(99)00089-0     Document Type: Article

References (9)

1. Mazer J.A. Solar cells: an introduction to crystalline photovoltaic technology. 1997;102-110 Kluwer Academic Publishers, Boston.
2. Green M.A., Emery K., Bücher K., King D.L. Solar cell efficiency tables (Version 5). Progress in Photovoltaics: Research and Applications. 3:1995;51-55.
3. Saritas M., McKell H. Comparison of minority carrier diffusion length measurements in Silicon by the photoconductive decay and surface photovoltage methods. J. Appl. Phys. 63:(9):1988;4561-4567.
4. Ramadan M.R.I. Effect of minority carrier lifetime in solar cells. Solar & Wind Technology. 6:1989;615-617.
5. Stokes E.D., Chu T.L. Appl. Phys. Lett. 30:1977;425.
6. Sze S.M. Physics of semiconductor devices. 2nd ed. 1993;50-53 Wiley Eastern Limited, New Delhi.
7. Finger F, Schmidt M, Schwarz R. Mikrokristalline Silicium-Schichten fuer Duennschicht-Solarzellen, Photovoltaik 3, Forschungsverbund Sonnenenergie, Themen 95/96, Koeln, 81-6, 1995.
8. Rose B.H., Weaver H.T. Determination of effective surface recombination velocity and minority-carrier in high-efficiency Si solar cells. J. Appl. Phys. 54:(1):1983;238-247.
9. Ghosh A.K., Fishman C., Feng T. Theory of the electrical and photovoltaic properties of polycrystalline silicon. J. Appl. Phys. 51:(1):1980;446-454.